Emerging memory and storage technologies, like phase-change memory, resistive RAM, and spin-transfer torque MRAM, combine nonvolatile data retention with near-DRAM speeds by exploiting novel materials and 3D stacking. By tackling the latency, endurance, and energy limits of traditional DRAM and NAND flash, they unlock faster, more power-efficient computing for applications ranging from in-memory processing and AI accelerators to low-power IoT devices, driving the next wave of data-centric system innovation.
According to BIS Research, global emerging memory and storage technology is projected to reach $18.34 billion by 2034 from $6.45 billion in 2024, growing at a CAGR of 10.86%
• Increasing Demand for Memory Devices That Provide Fast Access and Consume Minimal Power
• Explosion of AI/ML and High-Performance Computing Workloads
• High Manufacturing Cost of Next-Generation Memories
• Integration Complexity with Legacy Architectures
Non-Volatile Memory, Volatile Memory
Consumer Electronics, Enterprise Storage, Automotive and Transportation, Military and Aerospace, Industrial, Telecommunications, Energy and Power, Healthcare and Others
North America, Europe, Asia-Pacific, Latin America and Middle East and Africa
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Emerging non-volatile memories phase-change, resistive RAM and STT-MRAM, are transitioning from pilots to real-world use in data centers and edge devices, supported by maturing CXL/NVMe standards and improving yields, simplifying memory hierarchies and boosting performance and efficiency.
-BIS Research Analyst Team
The emerging memory and storage technology market is expected to grow at a CAGR of 10.86% from 2025–2034.
Leading companies include SAMSUNG, CrossBar Inc, 4DS Memory, RAMXEED, GlobalFoundries, TSMC and others.
Phase-change memory (PCM), resistive RAM (ReRAM), spin-transfer torque MRAM (STT-MRAM), 3D XPoint, and high-bandwidth memory (HBM) are the most in-demand technologies.
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